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,Influence of channel length and layout on TID for 0.18 μm NMOS transistors

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期刊

SCEs DIBL CLM Enclosed-layout

Influence of channel length and layout on TID for 0.18 μm NMOS transistors

Different channel lengths and layouts on 0.18μm NMOS transistors are designed for investigating the dependence of short......

期刊

NMOS晶体管沟道长度 TID 短沟道效应辐射诱发通道长度沟槽隔离特性曲线 SCEs DIBL CLM Enclosed-layout

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